P-channel enhancement mode power MOSFET featuring a 100V maximum drain-source voltage and 16A maximum continuous drain current. This single-element silicon transistor is housed in a TO-220FL package with a 3-pin through-hole mounting configuration. Key specifications include a ±20V maximum gate-source voltage, 210mOhm maximum drain-source resistance at 10V, and a maximum power dissipation of 60000mW. Operating temperature range is -55°C to 150°C.
PackageTO-220FL
MountingThrough Hole
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Technical Specifications
Toshiba 2SJ412(LBS6OKI) technical specifications.
General
Package Family Name
TO-220
Package/Case
TO-220FL
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.3(Max)
Package Width (mm)
4.7(Max)
Package Height (mm)
9.1
Seated Plane Height (mm)
13.1(Max)
Package Weight (g)
1.5
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
16A
Material
Si
Maximum Gate Threshold Voltage
2V
Maximum Drain Source Resistance
210@10VmOhm
Typical Gate Charge @ Vgs
48@10VnC
Typical Gate Charge @ 10V
48nC
Typical Input Capacitance @ Vds
1100@10VpF
Maximum Power Dissipation
60000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SJ412(LBS6OKI) Datasheet
Download the complete datasheet for Toshiba 2SJ412(LBS6OKI) to view detailed technical specifications.
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