P-channel enhancement mode silicon power MOSFET, surface mountable in a 4-pin (3+Tab) PW-Mini SOT package. Features a maximum drain-source voltage of 16V, continuous drain current of 2A, and a maximum drain-source on-resistance of 710mΩ at 4V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1500mW.
PackagePW-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SJ465(T2LPP) technical specifications.
General
Package Family Name
SOT
Package/Case
PW-Mini
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
4.6(Max)
Package Width (mm)
2.5
Package Height (mm)
1.6(Max)
Seated Plane Height (mm)
1.6(Max)
Package Weight (g)
0.05
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
16V
Maximum Gate Source Voltage
±8V
Maximum Continuous Drain Current
2A
Material
Si
Maximum Drain Source Resistance
710@4VmOhm
Typical Gate Charge @ Vgs
5@5VnC
Typical Input Capacitance @ Vds
270@10VpF
Maximum Power Dissipation
1500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SJ465(T2LPP) Datasheet
Download the complete datasheet for Toshiba 2SJ465(T2LPP) to view detailed technical specifications.
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