P-channel enhancement mode silicon power MOSFET featuring a 50V drain-source voltage and 5A continuous drain current. This through-hole component is housed in a 3-pin TO-92 Mod plastic package with a maximum package length of 5.1mm, width of 4.1mm, and height of 8.2mm. It offers a maximum drain-source on-resistance of 190 mOhm at 10V, a typical gate charge of 18nC, and input capacitance of 470pF. Maximum power dissipation is 900mW, with an operating temperature range of -55°C to 150°C.
Toshiba 2SJ537(T6CANO,F) technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-92 |
| Package/Case | TO-92 Mod |
| Package Description | Plastic Header Style Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 5.1(Max) |
| Package Width (mm) | 4.1(Max) |
| Package Height (mm) | 8.2(Max) |
| Seated Plane Height (mm) | 10.4(Max) |
| Package Weight (g) | 0.36 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-92 |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 50V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 190@10VmOhm |
| Typical Gate Charge @ Vgs | 18@10VnC |
| Typical Gate Charge @ 10V | 18nC |
| Typical Input Capacitance @ Vds | 470@10VpF |
| Maximum Power Dissipation | 900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Toshiba 2SJ537(T6CANO,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.