P-channel enhancement mode silicon power MOSFET designed for through-hole mounting. Features a 50V drain-source voltage and 5A continuous drain current. Housed in a 3-pin TO-92 Mod plastic package with a maximum power dissipation of 900mW. Offers a low drain-source on-resistance of 190mΩ at 10V.
PackageTO-92 Mod
MountingThrough Hole
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Technical Specifications
Toshiba 2SJ537(T6MATUS,F) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-92 |
| Package/Case | TO-92 Mod |
| Package Description | Plastic Header Style Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 5.1(Max) |
| Package Width (mm) | 4.1(Max) |
| Package Height (mm) | 8.2(Max) |
| Seated Plane Height (mm) | 10.4(Max) |
| Package Weight (g) | 0.36 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-92 |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 50V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 190@10VmOhm |
| Typical Gate Charge @ Vgs | 18@10VnC |
| Typical Gate Charge @ 10V | 18nC |
| Typical Input Capacitance @ Vds | 470@10VpF |
| Maximum Power Dissipation | 900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SJ537(T6MATUS,F) Datasheet
Download the complete datasheet for Toshiba 2SJ537(T6MATUS,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.