N-channel Silicon Power MOSFET, single element, enhancement mode, designed for through-hole mounting. Features a 1000V drain-source voltage, 7A continuous drain current, and a maximum gate-source voltage of ±20V. Housed in a 3-pin TO-3P(N)IS plastic package with a tab, offering 1800mOhm drain-source resistance at 10V. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 90000mW.
PackageTO-3P(N)IS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK1365(LB106MA) technical specifications.
General
| Package/Case | TO-3P(N)IS |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.8 |
| Package Width (mm) | 5 |
| Package Height (mm) | 21 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 1000V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 7A |
| Material | Si |
| Maximum Drain Source Resistance | 1800@10VmOhm |
| Typical Gate Charge @ Vgs | 120@10VnC |
| Typical Gate Charge @ 10V | 120nC |
| Typical Input Capacitance @ Vds | 1300@25VpF |
| Maximum Power Dissipation | 90000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK1365(LB106MA) Datasheet
Download the complete datasheet for Toshiba 2SK1365(LB106MA) to view detailed technical specifications.
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