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Technical Specifications
Toshiba 2SK1489(Q) technical specifications.
General
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 150ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 26mm |
| Input Capacitance | 2nF |
| Lead Free | Lead Free |
| Length | 20.5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Width | 5.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SK1489(Q) Datasheet
Download the complete datasheet for Toshiba 2SK1489(Q) to view detailed technical specifications.
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