N-channel enhancement mode power MOSFET, silicon material, featuring a TO-220SM package for surface mounting. This single-element transistor offers a maximum drain-source voltage of 1000V and a continuous drain current of 4A. Key electrical characteristics include a maximum drain-source on-resistance of 3800 mOhm at 10V and a typical gate charge of 60 nC at 10V. Operating temperature range spans from -55°C to 150°C.
PackageTO-220SM
MountingSurface Mount
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Technical Specifications
Toshiba 2SK1930(SM) technical specifications.
General
| Package Family Name | TO-220 |
| Package/Case | TO-220SM |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 9.1 |
| Package Height (mm) | 4.7(Max) |
| Package Weight (g) | 1.4 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 1000V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 4A |
| Material | Si |
| Maximum Drain Source Resistance | 3800@10VmOhm |
| Typical Gate Charge @ Vgs | 60@10VnC |
| Typical Gate Charge @ 10V | 60nC |
| Typical Input Capacitance @ Vds | 700@25VpF |
| Maximum Power Dissipation | 100000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK1930(SM) Datasheet
Download the complete datasheet for Toshiba 2SK1930(SM) to view detailed technical specifications.
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