N-channel silicon enhancement mode MOSFET, designed for small signal applications. Features a maximum drain-source voltage of 20V and a continuous drain current of 0.1A. Packaged in a 3-pin USM (SOT-323) surface-mount configuration with dimensions of 2mm x 1.25mm x 0.9mm. Offers a maximum gate-source voltage of 10V and a drain-source on-resistance of 6000 mOhm at 2.5V. Operates within a temperature range of -55°C to 150°C.
PackageUSM
MountingSurface Mount
Quick Jump:
Technical Specifications
Toshiba 2SK2037(TE85L2) technical specifications.
General
| Package Family Name | USM |
| Package/Case | USM |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9 |
| Seated Plane Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Jedec | SOT-323 |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | 10V |
| Maximum Continuous Drain Current | 0.1A |
| Material | Si |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Input Capacitance @ Vds | 14@3VpF |
| Maximum Power Dissipation | 100mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | No |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba 2SK2037(TE85L2) Datasheet
Download the complete datasheet for Toshiba 2SK2037(TE85L2) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.