N-channel enhancement mode power MOSFET, single element silicon transistor. Features a maximum drain-source voltage of 100V and a continuous drain current of 3A. Surface mountable in a TO-252AB (New PW-Mold) package with 3 pins and a tab. Offers a maximum drain-source on-resistance of 350 mOhm at 10V, typical gate charge of 13.5 nC at 10V, and typical input capacitance of 280 pF at 10V. Maximum power dissipation is 20W, with an operating temperature range of -55°C to 150°C.
PackageNew PW-Mold
MountingSurface Mount
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Technical Specifications
Toshiba 2SK2201(T6L1SUMI,N technical specifications.
General
| Package/Case | New PW-Mold |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.4 |
| Package Weight (g) | 0.36 |
| Mounting | Surface Mount |
| Jedec | TO-252AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 3A |
| Material | Si |
| Maximum Drain Source Resistance | 350@10VmOhm |
| Typical Gate Charge @ Vgs | 13.5@10VnC |
| Typical Gate Charge @ 10V | 13.5nC |
| Typical Input Capacitance @ Vds | 280@10VpF |
| Maximum Power Dissipation | 20000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2201(T6L1SUMI,N Datasheet
Download the complete datasheet for Toshiba 2SK2201(T6L1SUMI,N to view detailed technical specifications.
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