N-channel enhancement mode power MOSFET, featuring a 60V drain-source voltage and 5A continuous drain current. This single-element silicon transistor is housed in a TO-252AB (New PW-Mold) surface-mount package with 3 pins and a tab, measuring 6.5mm x 5.5mm x 2.3mm. Key specifications include a maximum drain-source resistance of 160mΩ at 10V, typical gate charge of 12nC at 10V, and typical input capacitance of 370pF at 10V. Maximum power dissipation is 20W, with an operating temperature range of -55°C to 150°C.
PackageNew PW-Mold
MountingSurface Mount
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Technical Specifications
Toshiba 2SK2231(T6LKENW) technical specifications.
General
| Package/Case | New PW-Mold |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.4 |
| Package Weight (g) | 0.36 |
| Mounting | Surface Mount |
| Jedec | TO-252AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 160@10VmOhm |
| Typical Gate Charge @ Vgs | 12@10VnC |
| Typical Gate Charge @ 10V | 12nC |
| Typical Input Capacitance @ Vds | 370@10VpF |
| Maximum Power Dissipation | 20000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2231(T6LKENW) Datasheet
Download the complete datasheet for Toshiba 2SK2231(T6LKENW) to view detailed technical specifications.
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