N-channel MOSFET, 60V drain-source breakdown voltage, 5A continuous drain current, 160mΩ drain-source resistance. Features 370pF input capacitance, 65ns fall time, and 95ns turn-off delay. Operates from -55°C to 150°C with 20W maximum power dissipation. Available in TO-252-3 package, suitable for surface mount and through-hole applications.
PackageTO-252-3
Current Rating5A
MountingSurface Mount, Through Hole
PolarityN-CHANNEL
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Technical Specifications
Toshiba 2SK2231(TE16R1,NQ) technical specifications.
General
| Package/Case | TO-252-3 |
| Contact Plating | Tin, Silver |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 5A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 370pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20W |
| Mount | Surface Mount, Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| Turn-Off Delay Time | 95ns |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SK2231(TE16R1,NQ) Datasheet
Download the complete datasheet for Toshiba 2SK2231(TE16R1,NQ) to view detailed technical specifications.
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