N-channel enhancement mode silicon power MOSFET featuring a 60V drain-source voltage and 25A continuous drain current. This single-element transistor is housed in a TO-220NIS package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a maximum drain-source on-resistance of 46mΩ at 10V, typical gate charge of 38nC at 10V, and typical input capacitance of 1000pF at 10V. Maximum power dissipation is 35W, with an operating temperature range of -55°C to 150°C.
PackageTO-220NIS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2232(S2LUCAS) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220NIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 15 + 5.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 25A |
| Material | Si |
| Maximum Drain Source Resistance | 46@10VmOhm |
| Typical Gate Charge @ Vgs | 38@10VnC |
| Typical Gate Charge @ 10V | 38nC |
| Typical Input Capacitance @ Vds | 1000@10VpF |
| Maximum Power Dissipation | 35000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2232(S2LUCAS) Datasheet
Download the complete datasheet for Toshiba 2SK2232(S2LUCAS) to view detailed technical specifications.
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