N-channel enhancement mode silicon power MOSFET in a TO-3PL package. Features a maximum drain-source voltage of 60V and a continuous drain current of 60A. Offers a low drain-source on-resistance of 11mΩ at 10V. Designed for through-hole mounting with a 3-pin configuration and tab. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 150W.
PackageTO-3PL
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba 2SK2267(PAIRTMEIC2 technical specifications.
General
| Package/Case | TO-3PL |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 20 |
| Package Width (mm) | 5 |
| Package Height (mm) | 26 |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 60A |
| Material | Si |
| Maximum Drain Source Resistance | 11@10VmOhm |
| Typical Gate Charge @ Vgs | 170@10VnC |
| Typical Gate Charge @ 10V | 170nC |
| Typical Input Capacitance @ Vds | 5500@10VpF |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2267(PAIRTMEIC2 Datasheet
Download the complete datasheet for Toshiba 2SK2267(PAIRTMEIC2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.