N-channel enhancement mode power MOSFET, silicon material, featuring a 60V drain-source voltage and 60A continuous drain current. This single-element transistor is housed in a TO-3PN package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a maximum drain-source on-resistance of 11mΩ at 10V, typical gate charge of 170nC at 10V, and typical input capacitance of 5400pF at 10V. Maximum power dissipation is 150W, with an operating temperature range of -55°C to 150°C.
PackageTO-3PN
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2313(S1ND1) technical specifications.
General
| Package Family Name | TO-3PN |
| Package/Case | TO-3PN |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.9(Max) |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 19 |
| Seated Plane Height (mm) | 23.6(Max) |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 60A |
| Material | Si |
| Maximum Drain Source Resistance | 11@10VmOhm |
| Typical Gate Charge @ Vgs | 170@10VnC |
| Typical Gate Charge @ 10V | 170nC |
| Typical Input Capacitance @ Vds | 5400@10VpF |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Toshiba 2SK2313(S1ND1) Datasheet
Download the complete datasheet for Toshiba 2SK2313(S1ND1) to view detailed technical specifications.
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