N-channel silicon power MOSFET designed for through-hole mounting. Features a maximum drain-source voltage of 100V and a continuous drain current of 27A. This single-element transistor is housed in a TO-220AB package with a 3-pin configuration and tab. Key specifications include a maximum drain-source on-resistance of 85mΩ at 10V and a maximum power dissipation of 75W. Operating temperature range is -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba 2SK2314(WMATU) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Seated Plane Height (mm) | 18.2(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Weight (g) | 2 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 27A |
| Material | Si |
| Maximum Drain Source Resistance | 85@10VmOhm |
| Typical Gate Charge @ Vgs | 50@10VnC |
| Typical Gate Charge @ 10V | 50nC |
| Typical Input Capacitance @ Vds | 1100@10VpF |
| Maximum Power Dissipation | 75000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2314(WMATU) Datasheet
Download the complete datasheet for Toshiba 2SK2314(WMATU) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.