N-channel enhancement mode silicon power MOSFET featuring a 60V drain-source voltage and 45A continuous drain current. This single-element transistor utilizes pi-MOS V process technology and is housed in a TO-220FL package with 3 pins plus a tab for through-hole mounting. Key specifications include a maximum gate-source voltage of ±20V, a low drain-source on-resistance of 17mΩ at 10V, and a typical gate charge of 110nC at 10V. Maximum power dissipation is rated at 100W, with an operating temperature range of -55°C to 150°C.
PackageTO-220FL
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2376(LBS6OKI) technical specifications.
General
| Package Family Name | TO-220 |
| Package/Case | TO-220FL |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9.1 |
| Seated Plane Height (mm) | 13.1(Max) |
| Package Weight (g) | 1.5 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | pi-MOS V |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 45A |
| Material | Si |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 17@10VmOhm |
| Typical Gate Charge @ Vgs | 110@10VnC |
| Typical Gate Charge @ 10V | 110nC |
| Typical Input Capacitance @ Vds | 3350@10VpF |
| Maximum Power Dissipation | 100000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2376(LBS6OKI) Datasheet
Download the complete datasheet for Toshiba 2SK2376(LBS6OKI) to view detailed technical specifications.
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