N-channel enhancement mode silicon power MOSFET designed for through-hole mounting. Features a maximum drain-source voltage of 200V and a continuous drain current of 15A. The TO-220NIS package offers a 3-pin configuration with a tab, measuring 10mm in length, 4.5mm in width, and 15mm in height. Key electrical characteristics include a maximum drain-source on-resistance of 180mΩ at 10V, typical gate charge of 40nC, and typical input capacitance of 2000pF at 10V. Maximum power dissipation is rated at 45000mW, with an operating temperature range of -55°C to 150°C.
PackageTO-220NIS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2382(MURATA) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220NIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 15 + 5.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 15A |
| Material | Si |
| Maximum Drain Source Resistance | 180@10VmOhm |
| Typical Gate Charge @ Vgs | 40@10VnC |
| Typical Gate Charge @ 10V | 40nC |
| Typical Input Capacitance @ Vds | 2000@10VpF |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2382(MURATA) Datasheet
Download the complete datasheet for Toshiba 2SK2382(MURATA) to view detailed technical specifications.
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