2SK2382(S4HITTO)

N-channel enhancement mode power MOSFET featuring a 200V drain-source voltage and 15A continuous drain current. This single-element transistor is housed in a TO-220NIS package with 3 through-hole pins and a tab, offering a pin pitch of 2.54mm. Key specifications include a maximum drain-source on-resistance of 180mΩ at 10V, typical gate charge of 40nC at 10V, and typical input capacitance of 2000pF at 10V. Maximum power dissipation is 45W, with an operating temperature range of -55°C to 150°C.