N-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 50A continuous drain current. This single element transistor utilizes silicon material and is housed in a TO-3PN package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a maximum drain-source resistance of 18 mOhm at 10V, typical gate charge of 110 nC at 10V, and typical input capacitance of 3350 pF at 10V. Maximum power dissipation reaches 125W, with an operating temperature range of -55°C to 150°C.
PackageTO-3PN
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2445(LBMBSH2) technical specifications.
General
| Package Family Name | TO-3PN |
| Package/Case | TO-3PN |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.9(Max) |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 19 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 50A |
| Material | Si |
| Maximum Drain Source Resistance | 18@10VmOhm |
| Typical Gate Charge @ Vgs | 110@10VnC |
| Typical Gate Charge @ 10V | 110nC |
| Typical Input Capacitance @ Vds | 3350@10VpF |
| Maximum Power Dissipation | 125000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2445(LBMBSH2) Datasheet
Download the complete datasheet for Toshiba 2SK2445(LBMBSH2) to view detailed technical specifications.
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