N-channel enhancement mode power MOSFET, silicon material, featuring a 600V drain-source voltage and 6A continuous drain current. This single-element transistor is housed in a TO-220AB package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a maximum drain-source resistance of 1250 mOhm at 10V, typical gate charge of 30 nC, and typical input capacitance of 1300 pF at 10V. Maximum power dissipation is 80W, with an operating temperature range of -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2544(S4PHIT) technical specifications.
General
Package/Case
TO-220AB
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.3(Max)
Package Width (mm)
4.7(Max)
Package Height (mm)
9(Max)
Package Weight (g)
2
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
6A
Material
Si
Maximum Drain Source Resistance
1250@10VmOhm
Typical Gate Charge @ Vgs
30@10VnC
Typical Gate Charge @ 10V
30nC
Typical Input Capacitance @ Vds
1300@10VpF
Maximum Power Dissipation
80000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SK2544(S4PHIT) Datasheet
Download the complete datasheet for Toshiba 2SK2544(S4PHIT) to view detailed technical specifications.
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