2SK2545(MDNSI1,Q)

N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 6A continuous drain current. This through-hole mounted component utilizes a TO-220NIS package with 3 pins and a tab, offering a maximum power dissipation of 40W. Key specifications include a maximum drain-source on-resistance of 1250mΩ at 10V, typical gate charge of 30nC at 10V, and typical input capacitance of 1300pF at 10V. Operating temperature range is -55°C to 150°C.