N-channel enhancement mode power MOSFET, silicon, featuring 800V drain-source voltage and 5A continuous drain current. This single-element transistor utilizes pi-MOS III process technology and is housed in a TO-220NIS package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a maximum drain-source resistance of 2200 mOhm at 10V, typical gate charge of 34 nC at 10V, and typical input capacitance of 1080 pF at 25V. Maximum power dissipation is 45000 mW, with an operating temperature range of -55°C to 150°C.
PackageTO-220NIS
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba 2SK2605(LBS2RUKO) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220NIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 15 + 5.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | pi-MOS III |
| Maximum Drain Source Voltage | 800V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 2200@10VmOhm |
| Typical Gate Charge @ Vgs | 34@10VnC |
| Typical Gate Charge @ 10V | 34nC |
| Typical Input Capacitance @ Vds | 1080@25VpF |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2605(LBS2RUKO) Datasheet
Download the complete datasheet for Toshiba 2SK2605(LBS2RUKO) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.