TOSHIBA

2SK2605(LBS2SHRP)

N-CH Power MOSFET 800V 5A TO-220NIS Through Hole

Toshiba

2SK2605(LBS2SHRP)

Name: 2SK2605(LBS2SHRP) Toshiba
Brand: Toshiba
SKU: 2SK2605(LBS2SHRP)

N-CH Power MOSFET 800V 5A TO-220NIS Through Hole

N-channel enhancement mode power MOSFET featuring 800V drain-source voltage and 5A continuous drain current. This single-element silicon transistor utilizes pi-MOS III process technology and is housed in a 3-pin TO-220NIS through-hole package with a tab. Key specifications include a maximum drain-source on-resistance of 2200 mOhm at 10V, typical gate charge of 34 nC, and typical input capacitance of 1080 pF at 25V. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 45W.

PackageTO-220NIS

MountingThrough Hole

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Technical Specifications

Toshiba 2SK2605(LBS2SHRP) technical specifications.

General

Basic Package Type	Through Hole
Package Family Name	TO-220
Package/Case	TO-220NIS
Package Description	Transistor Outline Package
Lead Shape	Through Hole
Pin Count	3
PCB	3
Tab	Tab
Package Length (mm)	10
Package Width (mm)	4.5
Package Height (mm)	15
Seated Plane Height (mm)	15 + 5.6(Max)
Pin Pitch (mm)	2.54
Package Material	Plastic
Mounting	Through Hole
Configuration	Single
Category	Power MOSFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Process Technology	pi-MOS III
Maximum Drain Source Voltage	800V
Maximum Gate Source Voltage	±30V
Maximum Continuous Drain Current	5A
Material	Si
Maximum Drain Source Resistance	2200@10VmOhm
Typical Gate Charge @ Vgs	34@10VnC
Typical Gate Charge @ 10V	34nC
Typical Input Capacitance @ Vds	1080@25VpF
Maximum Power Dissipation	45000mW
Min Operating Temperature	-55°C
Max Operating Temperature	150°C

Compliance

Cage Code	S0562
HTS Code	8541290095
Schedule B	8541290080
ECCN	EAR99
Automotive	No
AEC Qualified	No
PPAP	No
Radiation Hardening	No

Datasheet

No datasheet is available for this part.