2SK2605(STA4,Q,T)

N-channel enhancement mode power MOSFET featuring 800V drain-source voltage and 5A continuous drain current. This single element silicon transistor utilizes pi-MOS III process technology and is housed in a 3-pin TO-220NIS through-hole package with a tab. Key specifications include a maximum drain-source resistance of 2200 mOhm at 10V and a typical gate charge of 34 nC at 10V. Maximum power dissipation is 45000 mW, with an operating temperature range of -55°C to 150°C.