N-channel enhancement mode power MOSFET featuring a 900V drain-source voltage and 5A continuous drain current. This single-element transistor is housed in a TO-3PN package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a maximum drain-source resistance of 2500 mOhm at 10V, typical gate charge of 45 nC at 10V, and typical input capacitance of 1200 pF at 25V. Maximum power dissipation is 150W, with an operating temperature range of -55°C to 150°C.
PackageTO-3PN
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2610(MDNSI3,F,T technical specifications.
General
| Package Family Name | TO-3PN |
| Package/Case | TO-3PN |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.9(Max) |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 19 |
| Seated Plane Height (mm) | 23.6(Max) |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 2500@10VmOhm |
| Typical Gate Charge @ Vgs | 45@10VnC |
| Typical Gate Charge @ 10V | 45nC |
| Typical Input Capacitance @ Vds | 1200@25VpF |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SK2610(MDNSI3,F,T Datasheet
Download the complete datasheet for Toshiba 2SK2610(MDNSI3,F,T to view detailed technical specifications.
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