N-channel MOSFET with 1kV drain-source breakdown voltage and 8A continuous drain current. Features 1.7Ω maximum drain-source on-resistance and 4V threshold voltage. Operates across a -55°C to 150°C temperature range with 150W maximum power dissipation. Through-hole mount package with 30ns fall time and 2nF input capacitance. RoHS compliant and lead-free.
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Toshiba 2SK2613(F) technical specifications.
General
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1.7R |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 19mm |
| Input Capacitance | 2nF |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 1.7R |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Width | 4.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SK2613(F) Datasheet
Download the complete datasheet for Toshiba 2SK2613(F) to view detailed technical specifications.
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