TOSHIBA

2SK2662(MURATA1,Q)

N-CH MOSFET 500V 5A TO-220NIS Through Hole Power Transistor

Toshiba

2SK2662(MURATA1,Q)

Name: 2SK2662(MURATA1,Q) Toshiba
Brand: Toshiba
SKU: 2SK2662(MURATA1,Q)

N-CH MOSFET 500V 5A TO-220NIS Through Hole Power Transistor

N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 5A continuous drain current. This through-hole component utilizes a TO-220NIS package with 3 pins and a tab, constructed from plastic. Key specifications include a maximum gate-source voltage of ±30V, a maximum gate threshold voltage of 4V, and a maximum drain-source on-resistance of 1500 mOhm at 10V. Maximum power dissipation is 35000 mW, with operating temperatures ranging from -55°C to 150°C.

PackageTO-220NIS

MountingThrough Hole

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Technical Specifications

Toshiba 2SK2662(MURATA1,Q) technical specifications.

General

Basic Package Type	Through Hole
Package Family Name	TO-220
Package/Case	TO-220NIS
Package Description	Transistor Outline Package
Lead Shape	Through Hole
Pin Count	3
PCB	3
Tab	Tab
Package Length (mm)	10
Package Width (mm)	4.5
Package Height (mm)	15
Seated Plane Height (mm)	15 + 5.6(Max)
Pin Pitch (mm)	2.54
Package Material	Plastic
Mounting	Through Hole
Configuration	Single
Category	Power MOSFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Process Technology	pi-MOS V
Maximum Drain Source Voltage	500V
Maximum Gate Source Voltage	±30V
Maximum Continuous Drain Current	5A
Material	Si
Maximum Gate Threshold Voltage	4V
Maximum Drain Source Resistance	1500@10VmOhm
Typical Gate Charge @ Vgs	17@10VnC
Typical Gate Charge @ 10V	17nC
Typical Input Capacitance @ Vds	780@10VpF
Maximum Power Dissipation	35000mW
Min Operating Temperature	-55°C
Max Operating Temperature	150°C

Compliance

Cage Code	S0562
EU RoHS	Yes
HTS Code	8541290095
Schedule B	8541290080
ECCN	EAR99
Automotive	No
AEC Qualified	No
PPAP	No
Radiation Hardening	No
RoHS Versions	2002/95/EC

Datasheet

No datasheet is available for this part.