2SK2662(MURATA1Q,T

N-CH MOSFET 500V 5A TO-220 Power Transistor

N-channel enhancement mode power MOSFET featuring 500V drain-source voltage and 5A continuous drain current. This single-element silicon transistor utilizes pi-MOS V process technology and is housed in a TO-220NIS through-hole package with 3 pins and a tab. Key specifications include a maximum gate-source voltage of ±30V, a maximum drain-source on-resistance of 1500 mΩ at 10V, and a maximum power dissipation of 35W. Operating temperature range is -55°C to 150°C.

PackageTO-220NIS

MountingThrough Hole

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Technical Specifications

Toshiba 2SK2662(MURATA1Q,T technical specifications.

General

Basic Package Type	Through Hole
Package Family Name	TO-220
Package/Case	TO-220NIS
Package Description	Transistor Outline Package
Lead Shape	Through Hole
Pin Count	3
PCB	3
Tab	Tab
Package Length (mm)	10
Package Width (mm)	4.5
Package Height (mm)	15
Seated Plane Height (mm)	15 + 5.6(Max)
Pin Pitch (mm)	2.54
Package Material	Plastic
Mounting	Through Hole
Configuration	Single
Category	Power MOSFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Process Technology	pi-MOS V
Maximum Drain Source Voltage	500V
Maximum Gate Source Voltage	±30V
Maximum Continuous Drain Current	5A
Material	Si
Maximum Gate Threshold Voltage	4V
Maximum Drain Source Resistance	1500@10VmOhm
Typical Gate Charge @ Vgs	17@10VnC
Typical Gate Charge @ 10V	17nC
Typical Input Capacitance @ Vds	780@10VpF
Maximum Power Dissipation	35000mW
Min Operating Temperature	-55°C
Max Operating Temperature	150°C

Compliance

Cage Code	S0562
EU RoHS	Yes
HTS Code	8541290095
Schedule B	8541290080
ECCN	EAR99
Automotive	No
AEC Qualified	No
PPAP	No
Radiation Hardening	No
RoHS Versions	2002/95/EC

Datasheet

This datasheet cannot be embedded due to technical restrictions.

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