TOSHIBA

2SK2679(LBS2SHRP)

N-CH MOSFET 400V 5.5A TO-220 Power Transistor

Toshiba

2SK2679(LBS2SHRP)

Name: 2SK2679(LBS2SHRP) Toshiba
Brand: Toshiba
SKU: 2SK2679(LBS2SHRP)

N-CH MOSFET 400V 5.5A TO-220 Power Transistor

N-channel enhancement mode power MOSFET featuring a 400V drain-source voltage and 5.5A continuous drain current. This single-element transistor utilizes pi-MOS V process technology and is housed in a 3-pin TO-220NIS through-hole package with a tab. Key specifications include a ±30V gate-source voltage, 4V gate threshold voltage, and 1200 mOhm maximum drain-source resistance at 10V. The component offers a maximum power dissipation of 35000 mW and operates within a temperature range of -55°C to 150°C.

PackageTO-220NIS

MountingThrough Hole

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Technical Specifications

Toshiba 2SK2679(LBS2SHRP) technical specifications.

General

Basic Package Type	Through Hole
Package Family Name	TO-220
Package/Case	TO-220NIS
Package Description	Transistor Outline Package
Lead Shape	Through Hole
Pin Count	3
PCB	3
Tab	Tab
Package Length (mm)	10
Package Width (mm)	4.5
Package Height (mm)	15
Seated Plane Height (mm)	15 + 5.6(Max)
Pin Pitch (mm)	2.54
Package Material	Plastic
Mounting	Through Hole
Configuration	Single
Category	Power MOSFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Process Technology	pi-MOS V
Maximum Drain Source Voltage	400V
Maximum Gate Source Voltage	±30V
Maximum Continuous Drain Current	5.5A
Material	Si
Maximum Gate Threshold Voltage	4V
Maximum Drain Source Resistance	1200@10VmOhm
Typical Gate Charge @ Vgs	17@10VnC
Typical Gate Charge @ 10V	17nC
Typical Input Capacitance @ Vds	720@10VpF
Maximum Power Dissipation	35000mW
Min Operating Temperature	-55°C
Max Operating Temperature	150°C

Compliance

Cage Code	S0562
HTS Code	8541290095
Schedule B	8541290080
ECCN	EAR99
Automotive	No
AEC Qualified	No
PPAP	No
Radiation Hardening	No

Datasheet

No datasheet is available for this part.