N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 12A continuous drain current. This single-element silicon transistor is housed in a TO-3PN package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a maximum drain-source on-resistance of 650 mOhm at 10V, typical gate charge of 58 nC at 10V, and typical input capacitance of 2600 pF at 10V. Maximum power dissipation is rated at 150W, with an operating temperature range of -55°C to 150°C.
PackageTO-3PN
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2699(LBGRUND) technical specifications.
General
| Package Family Name | TO-3PN |
| Package/Case | TO-3PN |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.9(Max) |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 19 |
| Seated Plane Height (mm) | 23.6(Max) |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 12A |
| Material | Si |
| Maximum Drain Source Resistance | 650@10VmOhm |
| Typical Gate Charge @ Vgs | 58@10VnC |
| Typical Gate Charge @ 10V | 58nC |
| Typical Input Capacitance @ Vds | 2600@10VpF |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2699(LBGRUND) Datasheet
Download the complete datasheet for Toshiba 2SK2699(LBGRUND) to view detailed technical specifications.
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