N-channel enhancement mode power MOSFET featuring 900V drain-source voltage and 3A continuous drain current. This single-element transistor utilizes pi-MOS III process technology and is housed in a 3-pin TO-220NIS through-hole package with a tab. Key specifications include a maximum gate-source voltage of ±30V, a maximum drain-source on-resistance of 4300 mOhm at 10V, and a maximum power dissipation of 40W. Operating temperature range is -55°C to 150°C.
PackageTO-220NIS
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba 2SK2700(LBS4NCN1) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220NIS
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
15 + 5.6(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
pi-MOS III
Maximum Drain Source Voltage
900V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
3A
Material
Si
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
4300@10VmOhm
Typical Gate Charge @ Vgs
25@10VnC
Typical Gate Charge @ 10V
25nC
Typical Input Capacitance @ Vds
750@25VpF
Maximum Power Dissipation
40000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
70pF
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SK2700(LBS4NCN1) Datasheet
Download the complete datasheet for Toshiba 2SK2700(LBS4NCN1) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.