2SK2717(MDNSI)

N-channel enhancement mode power MOSFET featuring a 900V drain-source voltage and 5A continuous drain current. This single-element silicon transistor utilizes pi-MOS III process technology and is housed in a TO-220NIS through-hole package with 3 pins and a tab. Key specifications include a maximum gate-source voltage of ±30V, 2500mΩ drain-source resistance at 10V, and 45nC typical gate charge at 10V. The plastic package measures 10mm x 4.5mm x 15mm, with a seated plane height of 15mm + 5.6mm (Max) and a pin pitch of 2.54mm. Maximum power dissipation is 45000mW, with an operating temperature range of -55°C to 150°C.