2SK2717(MURATA2,F)

N-CH MOSFET 900V 5A TO-220 Power Transistor

N-channel enhancement mode power MOSFET, silicon material, featuring a 900V maximum drain-source voltage and 5A maximum continuous drain current. This through-hole mounted component utilizes a TO-220NIS package with 3 pins and a tab, offering a 2.54mm pin pitch. Key specifications include a maximum drain-source on-resistance of 2500mOhm at 10V, typical gate charge of 45nC at 10V, and typical input capacitance of 1200pF at 25V. Maximum power dissipation is 45000mW, with an operating temperature range from -55°C to 150°C.

PackageTO-220NIS

MountingThrough Hole

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Technical Specifications

Toshiba 2SK2717(MURATA2,F) technical specifications.

General

Basic Package Type	Through Hole
Package Family Name	TO-220
Package/Case	TO-220NIS
Package Description	Transistor Outline Package
Lead Shape	Through Hole
Pin Count	3
PCB	3
Tab	Tab
Package Length (mm)	10
Package Width (mm)	4.5
Package Height (mm)	15
Seated Plane Height (mm)	15 + 5.6(Max)
Pin Pitch (mm)	2.54
Package Material	Plastic
Mounting	Through Hole
Configuration	Single
Category	Power MOSFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Process Technology	pi-MOS III
Maximum Drain Source Voltage	900V
Maximum Gate Source Voltage	±30V
Maximum Continuous Drain Current	5A
Material	Si
Maximum Drain Source Resistance	2500@10VmOhm
Typical Gate Charge @ Vgs	45@10VnC
Typical Gate Charge @ 10V	45nC
Typical Input Capacitance @ Vds	1200@25VpF
Maximum Power Dissipation	45000mW
Min Operating Temperature	-55°C
Max Operating Temperature	150°C

Compliance

Cage Code	S0562
EU RoHS	Yes
HTS Code	8541290095
Schedule B	8541290080
ECCN	EAR99
Automotive	No
AEC Qualified	No
PPAP	No
Radiation Hardening	No
RoHS Versions	2002/95/EC

Datasheet

No datasheet is available for this part.