N-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 5A continuous drain current. This single-element silicon transistor is housed in a 4-pin (3+Tab) 2-7H1B surface-mount package with a maximum power dissipation of 2500mW. Key electrical characteristics include a maximum drain-source on-resistance of 160 mOhm at 10V, typical gate charge of 12 nC, and typical input capacitance of 370 pF. Operating temperature range spans from -55°C to 150°C.
Package2-7H1B
MountingSurface Mount
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Technical Specifications
Toshiba 2SK2741(T6LALPINE) technical specifications.
General
| Package/Case | 2-7H1B |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.7(Max) |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 1.7(Max) |
| Seated Plane Height (mm) | 1.7(Max) |
| Pin Pitch (mm) | 2.3 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 160@10VmOhm |
| Typical Gate Charge @ Vgs | 12@10VnC |
| Typical Gate Charge @ 10V | 12nC |
| Typical Input Capacitance @ Vds | 370@10VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2741(T6LALPINE) Datasheet
Download the complete datasheet for Toshiba 2SK2741(T6LALPINE) to view detailed technical specifications.
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