N-channel enhancement mode silicon power MOSFET, featuring a 100V drain-source voltage and 3A continuous drain current. This single-element transistor is housed in a 4-pin (3+Tab) 2-7H1B surface-mount package with a 2.3mm pin pitch. Key electrical characteristics include a maximum drain-source on-resistance of 350mOhm at 10V, typical gate charge of 13.5nC at 10V, and typical input capacitance of 280pF at 10V. Maximum power dissipation is 2500mW, with an operating temperature range of -55°C to 150°C.
Package2-7H1B
MountingSurface Mount
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Technical Specifications
Toshiba 2SK2742(T6LAISIN) technical specifications.
General
| Package/Case | 2-7H1B |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.7(Max) |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 1.7(Max) |
| Seated Plane Height (mm) | 1.7(Max) |
| Pin Pitch (mm) | 2.3 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 3A |
| Material | Si |
| Maximum Drain Source Resistance | 350@10VmOhm |
| Typical Gate Charge @ Vgs | 13.5@10VnC |
| Typical Gate Charge @ 10V | 13.5nC |
| Typical Input Capacitance @ Vds | 280@10VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2742(T6LAISIN) Datasheet
Download the complete datasheet for Toshiba 2SK2742(T6LAISIN) to view detailed technical specifications.
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