N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 6A continuous drain current. This single-element silicon transistor is housed in a TO-220FL package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a maximum drain-source resistance of 1250 mOhm at 10V, typical gate charge of 30 nC at 10V, and typical input capacitance of 1300 pF at 10V. Maximum power dissipation is 65W, with an operating temperature range of -55°C to 150°C.
PackageTO-220FL
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2777(Q) technical specifications.
General
| Package Family Name | TO-220 |
| Package/Case | TO-220FL |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9.1 |
| Seated Plane Height (mm) | 13.1(Max) |
| Package Weight (g) | 1.5 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 6A |
| Material | Si |
| Maximum Drain Source Resistance | 1250@10VmOhm |
| Typical Gate Charge @ Vgs | 30@10VnC |
| Typical Gate Charge @ 10V | 30nC |
| Typical Input Capacitance @ Vds | 1300@10VpF |
| Maximum Power Dissipation | 65000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SK2777(Q) Datasheet
Download the complete datasheet for Toshiba 2SK2777(Q) to view detailed technical specifications.
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