N-channel enhancement mode power MOSFET, silicon material, designed for through-hole mounting. Features a maximum drain-source voltage of 400V and a continuous drain current of 10A. Housed in a TO-220AB package with 3 pins and a tab, offering a maximum power dissipation of 80W. Operating temperature range spans from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2841(S4HYUD) technical specifications.
General
| Package/Case | TO-220AB |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9(Max) |
| Package Weight (g) | 2 |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 400V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 10A |
| Material | Si |
| Maximum Drain Source Resistance | 550@10VmOhm |
| Typical Gate Charge @ Vgs | 34@10VnC |
| Typical Gate Charge @ 10V | 34nC |
| Typical Input Capacitance @ Vds | 1340@10VpF |
| Maximum Power Dissipation | 80000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2841(S4HYUD) Datasheet
Download the complete datasheet for Toshiba 2SK2841(S4HYUD) to view detailed technical specifications.
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