2SK2843(LITEC,Q)

N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 10A continuous drain current. This single-element silicon transistor is housed in a TO-220NIS package with 3 through-hole pins and a tab, offering a maximum power dissipation of 45000mW. Key electrical characteristics include a maximum gate-source voltage of ±30V, a typical drain-source on-resistance of 750mΩ at 10V, and a typical input capacitance of 2040pF at 10V. Operating temperature range spans from -55°C to 150°C.