N-channel enhancement mode silicon power MOSFET designed for surface mount applications. Features a maximum drain-source voltage of 900V and a continuous drain current of 1A. This single-element transistor is housed in a 3-pin DP case with a tab, offering a maximum power dissipation of 40W. Operating temperature range spans from -55°C to 150°C.
PackageCase DP
MountingSurface Mount
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Technical Specifications
Toshiba 2SK2845(LBS2SONY) technical specifications.
General
| Package/Case | Case DP |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.8(Max) |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.5(Max) |
| Seated Plane Height (mm) | 2.7(Max) |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 1A |
| Material | Si |
| Maximum Drain Source Resistance | 9000@10VmOhm |
| Typical Gate Charge @ Vgs | 15@10VnC |
| Typical Gate Charge @ 10V | 15nC |
| Typical Input Capacitance @ Vds | 350@25VpF |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2845(LBS2SONY) Datasheet
Download the complete datasheet for Toshiba 2SK2845(LBS2SONY) to view detailed technical specifications.
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