N-channel MOSFET featuring 900V drain-to-source breakdown voltage and 8A continuous drain current. Offers 1.4 Ohm Rds On, 85W power dissipation, and a maximum operating temperature of 150°C. Designed for through-hole mounting with a TO-3PN package, it includes fast switching characteristics with turn-on delay of 60ns and fall time of 20ns.
MountingThrough Hole
PolarityN-CHANNEL
Power85W
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Technical Specifications
Toshiba 2SK2847F technical specifications.
General
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20mm |
| Input Capacitance | 2.04nF |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 85W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 85W |
| Radiation Hardening | No |
| Rds On Max | 1.4R |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 60ns |
| Width | 4.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SK2847F Datasheet
Download the complete datasheet for Toshiba 2SK2847F to view detailed technical specifications.
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