2SK2882(AST,Q)

N-channel enhancement mode power MOSFET featuring a 150V drain-source voltage and 18A continuous drain current. This single-element silicon transistor is housed in a 3-pin TO-220NIS through-hole package with a tab, offering a maximum power dissipation of 45000mW. Key electrical characteristics include a ±20V gate-source voltage, 120mΩ maximum drain-source resistance at 10V, and typical gate charge of 57nC at 10V. Operating temperature range spans from -55°C to 150°C.