2SK2882(LBS2ND,Q)

N-channel enhancement mode power MOSFET featuring a 150V drain-source voltage and 18A continuous drain current. This single element silicon transistor is housed in a 3-pin TO-220NIS through-hole package with a pin pitch of 2.54mm. Key electrical characteristics include a maximum drain-source on-resistance of 120mΩ at 10V, typical gate charge of 57nC at 10V, and typical input capacitance of 1380pF at 10V. Maximum power dissipation is 45W, with an operating temperature range of -55°C to 150°C.