N-channel enhancement mode power MOSFET featuring a 150V drain-source voltage and 18A continuous drain current. This single-element silicon transistor is housed in a 3-pin TO-220NIS through-hole package with a pin pitch of 2.54mm. Key electrical characteristics include a maximum gate-source voltage of ±20V, a low drain-source on-resistance of 120mΩ at 10V, and a typical gate charge of 57nC at 10V. The component offers a maximum power dissipation of 45000mW and operates within a temperature range of -55°C to 150°C.
PackageTO-220NIS
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba 2SK2882(S4PSE,Q) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220NIS
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
15 + 5.6(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
150V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
18A
Material
Si
Maximum Drain Source Resistance
120@10VmOhm
Typical Gate Charge @ Vgs
57@10VnC
Typical Gate Charge @ 10V
57nC
Typical Input Capacitance @ Vds
1380@10VpF
Maximum Power Dissipation
45000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SK2882(S4PSE,Q) Datasheet
Download the complete datasheet for Toshiba 2SK2882(S4PSE,Q) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.