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Technical Specifications
Toshiba 2SK2917F technical specifications.
General
| Contact Plating | Copper, Tin, Silver |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.72nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| Turn-Off Delay Time | 27ns |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SK2917F Datasheet
Download the complete datasheet for Toshiba 2SK2917F to view detailed technical specifications.
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