N-channel enhancement mode power MOSFET, single element silicon transistor. Features 200V drain-source voltage, 5A continuous drain current, and 800mΩ maximum drain-source resistance at 10V. Surface mountable in a 3-pin TO-252AB (New PW-Mold) package with tab. Operates from -55°C to 150°C with 20W maximum power dissipation.
PackageNew PW-Mold
MountingSurface Mount
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Technical Specifications
Toshiba 2SK2920(T6L1TOLT,N technical specifications.
General
| Package/Case | New PW-Mold |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.4 |
| Package Weight (g) | 0.36 |
| Mounting | Surface Mount |
| Jedec | TO-252AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 800@10VmOhm |
| Typical Gate Charge @ Vgs | 10@10VnC |
| Typical Gate Charge @ 10V | 10nC |
| Typical Input Capacitance @ Vds | 440@10VpF |
| Maximum Power Dissipation | 20000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2920(T6L1TOLT,N Datasheet
Download the complete datasheet for Toshiba 2SK2920(T6L1TOLT,N to view detailed technical specifications.
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