N-channel enhancement mode silicon power MOSFET featuring a 400V drain-source voltage and 8.5A continuous drain current. This through-hole component is housed in a TO-220NIS package with a 3-pin configuration and tab. Key electrical characteristics include a maximum drain-source on-resistance of 550 mΩ at 10V, typical gate charge of 34 nC at 10V, and typical input capacitance of 1340 pF at 10V. Maximum power dissipation is rated at 40W, with an operating temperature range of -55°C to 150°C.
PackageTO-220NIS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2952(IKEDA) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220NIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 15 + 5.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 400V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 8.5A |
| Material | Si |
| Maximum Drain Source Resistance | 550@10VmOhm |
| Typical Gate Charge @ Vgs | 34@10VnC |
| Typical Gate Charge @ 10V | 34nC |
| Typical Input Capacitance @ Vds | 1340@10VpF |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2952(IKEDA) Datasheet
Download the complete datasheet for Toshiba 2SK2952(IKEDA) to view detailed technical specifications.
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