N-channel enhancement mode power MOSFET designed for through-hole mounting. Features a 60V drain-source voltage, 2A continuous drain current, and a maximum gate-source voltage of ±20V. Housed in a 3-pin TO-92 Mod plastic package with a maximum drain-source on-resistance of 270 mΩ at 10V. Typical gate charge is 5.8 nC, and input capacitance is 170 pF. Maximum power dissipation is 900 mW, with an operating temperature range of -55°C to 150°C.
PackageTO-92 Mod
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2961(T6NISAN) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92 Mod
Package Description
Plastic Header Style Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
5.1(Max)
Package Width (mm)
4.1(Max)
Package Height (mm)
8.2(Max)
Seated Plane Height (mm)
10.4(Max)
Package Weight (g)
0.36
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-92
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
L2-pi-MOS V
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
2A
Material
Si
Maximum Gate Threshold Voltage
2V
Maximum Drain Source Resistance
270@10VmOhm
Typical Gate Charge @ Vgs
5.8@10VnC
Typical Gate Charge @ 10V
5.8nC
Typical Input Capacitance @ Vds
170@10VpF
Maximum Power Dissipation
900mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
75pF
Compliance
Cage Code
S0562
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SK2961(T6NISAN) Datasheet
Download the complete datasheet for Toshiba 2SK2961(T6NISAN) to view detailed technical specifications.
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