N-channel enhancement mode power MOSFET in a TO-3PN package, featuring a 250V drain-source voltage and 30A continuous drain current. This single-element silicon transistor offers a low 68mΩ drain-source resistance at 10V Vgs and a typical gate charge of 132nC. With a maximum power dissipation of 150W, it is designed for through-hole mounting and operates within a temperature range of -55°C to 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Toshiba 2SK2967(FUJTD) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package Family Name | TO-3PN |
| Package/Case | TO-3PN |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.9(Max) |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 19 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 250V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 30A |
| Material | Si |
| Maximum Drain Source Resistance | 68@10VmOhm |
| Typical Gate Charge @ Vgs | 132@10VnC |
| Typical Gate Charge @ 10V | 132nC |
| Typical Input Capacitance @ Vds | 5400@10VpF |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba 2SK2967(FUJTD) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
