N-channel enhancement mode power MOSFET featuring a 900V maximum drain-source voltage and 10A continuous drain current. This single-element silicon transistor is housed in a TO-3PN package with a 3-pin configuration and tab, designed for through-hole mounting. Key specifications include a maximum drain-source on-resistance of 1250 mOhm at 10V, typical gate charge of 70nC, and typical input capacitance of 2150pF at 25V. Maximum power dissipation is rated at 150,000mW, with an operating temperature range from -55°C to 150°C.
PackageTO-3PN
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2968(SAS) technical specifications.
General
| Package Family Name | TO-3PN |
| Package/Case | TO-3PN |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.9(Max) |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 19 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 10A |
| Material | Si |
| Maximum Drain Source Resistance | 1250@10VmOhm |
| Typical Gate Charge @ Vgs | 70@10VnC |
| Typical Gate Charge @ 10V | 70nC |
| Typical Input Capacitance @ Vds | 2150@25VpF |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2968(SAS) Datasheet
Download the complete datasheet for Toshiba 2SK2968(SAS) to view detailed technical specifications.
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