N-channel enhancement mode silicon power MOSFET featuring a 60V drain-source voltage and 55A continuous drain current. This single-element transistor is housed in a TO-220FL package with a 3-pin configuration and tab for through-hole mounting. Key specifications include a maximum drain-source on-resistance of 5.8 mOhm at 10V, typical gate charge of 210 nC at 10V, and typical input capacitance of 9300 pF at 10V. Maximum power dissipation is 100W, with an operating temperature range of -55°C to 150°C.
PackageTO-220FL
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2986(Q) technical specifications.
General
| Package Family Name | TO-220 |
| Package/Case | TO-220FL |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9.1 |
| Seated Plane Height (mm) | 13.1(Max) |
| Package Weight (g) | 1.5 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 55A |
| Material | Si |
| Maximum Drain Source Resistance | 5.8@10VmOhm |
| Typical Gate Charge @ Vgs | 210@10VnC |
| Typical Gate Charge @ 10V | 210nC |
| Typical Input Capacitance @ Vds | 9300@10VpF |
| Maximum Power Dissipation | 100000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SK2986(Q) Datasheet
Download the complete datasheet for Toshiba 2SK2986(Q) to view detailed technical specifications.
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